Single-spin measurement using single-electron transistors to probe two-electron systems
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چکیده
منابع مشابه
Spin effects in ferromagnetic single-electron transistors
Electron tunneling in ferromagnetic single-electron transistors is considered theoretically in the sequential tunneling regime. A new formalism is developed, which operates in a two-dimensional space of states, instead of one-dimensional space used in the spinless case. It is shown that spin fluctuations can be significantly larger than the charge fluctuations. The influence of discrete energy ...
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ژورنال
عنوان ژورنال: Physical Review B
سال: 2000
ISSN: 0163-1829,1095-3795
DOI: 10.1103/physrevb.61.2961